Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films maintain their ferroelectric properties and crystal structure even after heat treatment at temperatures up to 600 C in both hydrogen and argon atmospheres. This high stability makes them ideal for high-temperature manufacturing processes under the H2-included atmosphere used in fabricating advanced memory devices.
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